WS512K8-120CQE
SRAM Module, 512KX8, 120ns, CMOS, CDMA32Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation WS512K8-120CQE is a 512K x 8 asynchronous CMOS SRAM module with a maximum access time of 120ns. This module offers a total memory density of 4 Megabits and operates from a 4.5V to 5.5V supply range, with a nominal 5V. The device is packaged in a rectangular, ceramic, metal-sealed cofired microelectronic assembly, featuring 32 through-hole terminals. Designed for demanding applications, it supports a wide operating temperature range from -55°C to +125°C. The WS512K8 series is commonly utilized in aerospace, defense, and industrial control systems requiring robust and reliable memory solutions.
Additional Information
Series: WS512K8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-CDMA-T32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | SRAM MODULE |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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