WS512K8-120CIE
SRAM Module, 512KX8, 120ns, CMOS, CDMA32Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation WS512K8-120CIE is a CMOS SRAM module from the WS512K8 series, featuring a 512K x 8 organization. This asynchronous memory component offers a maximum access time of 120ns and operates within a supply voltage range of 4.5V to 5.5V. The device is housed in a rectangular, metal-sealed ceramic package with through-hole terminals, conforming to the R-CDMA-T32 JESD-30 code. Its robust construction and operating temperature range of -40°C to 85°C make it suitable for demanding applications across various industries including aerospace, defense, and industrial control systems. This parallel memory module provides a total density of 4Mbit.
Additional Information
Series: WS512K8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| JESD_30_Code | R-CDMA-T32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | SRAM MODULE |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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