WS1M8V-55CIA
Standard SRAM, 1MX8, 55ns, CMOS, CDIP32Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation WS1M8 series asynchronous CMOS SRAM, part number WS1M8V-55CIA. This standard SRAM offers a memory organization of 1M words by 8 bits, providing a total memory density of 8,388,608 bits. Featuring a maximum access time of 55ns, this component operates with a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The WS1M8V-55CIA is housed in a 32-terminal CDIP (Ceramic Dual In-line Package) with a rectangular, in-line, through-hole terminal form and a pitch of 2.500mm. Operating within an industrial temperature range of -40°C to +85°C, this device is suitable for applications in aerospace, defense, and industrial control systems.
Additional Information
Series: WS1M8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 55.0000000000000000 |
| JESD_30_Code | R-CDIP-T32 |
| Memory_Density | 8388608.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.500 |
| Terminal_Position | Dual |
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