WS1M8V-20CM
Standard SRAM, 1MX8, 20ns, CMOS, CDIP32Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation WS1M8 series asynchronous CMOS SRAM, part number WS1M8V-20CM. This component provides 8,388,608 bits of memory organized as 1M words by 8 bits, featuring a maximum access time of 20ns. Operating within a temperature range of -55°C to +125°C, it requires a supply voltage between 3.0V and 3.6V, with a nominal value of 3.3V. The WS1M8V-20CM is housed in a 32-terminal ceramic, dual in-line, through-hole package (JESD30 code: R-CDIP-T32). This high-reliability memory is suitable for applications in aerospace, defense, and industrial sectors demanding robust performance and extended temperature operation.
Additional Information
Series: WS1M8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 20.0000000000000000 |
| JESD_30_Code | R-CDIP-T32 |
| Memory_Density | 8388608.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.500 |
| Terminal_Position | Dual |
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