WS1M8V-100CMA
Standard SRAM, 1MX8, 100ns, CMOS, CDIP32Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation WS1M8 series asynchronous standard SRAM, part number WS1M8V-100CMA. This CMOS device features a 1M x 8 memory organization, providing 8,388,608 bits of storage. It offers a maximum access time of 100ns and operates within a temperature range of -55°C to +125°C. The WS1M8V-100CMA is housed in a 32-lead ceramic dual in-line package (CDIP32, R-CDIP-T32) with through-hole mounting. Designed for demanding applications, this component is suitable for use in aerospace, defense, and industrial systems requiring high reliability and performance. Supply voltage operates from 3.0V to 3.6V.
Additional Information
Series: WS1M8RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 42.4000 |
| Width | 15.2400 |
| Technology | CMOS |
| Access_Time_Max | 100.0000000000000000 |
| JESD_30_Code | R-CDIP-T32 |
| Memory_Density | 8388608.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 1MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 1048576.0000000000000000 |
| Number_of_Words_Code | 1M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 |
| Seated_Height_Max | 5.1000 |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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