MAS5104CB
Standard SRAM, 4KX1, 135ns, CMOS, CDIP18Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation MAS5104 Series asynchronous standard SRAM, part number MAS5104CB. This CMOS memory component features a 4K x 1 organization with a maximum access time of 135ns. It operates with separate I/O and employs 3-state output characteristics. The device is housed in a 18-lead ceramic dual in-line package (CDIP18) with through-hole termination. Operating temperature ranges from -55°C to +125°C, with a nominal supply voltage of 5V. Standby current is rated at a maximum of 2mA. This component is suitable for applications in aerospace, defense, and industrial sectors requiring reliable memory solutions.
Additional Information
Series: MAS5104RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 135.0000000000000000 |
| I_O_Type | SEPARATE |
| JESD_30_Code | R-XDIP-T18 |
| Memory_Density | 4096.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 4KX1 |
| Memory_Width | 1 |
| Number_of_Terminals | 18 |
| Number_of_Words | 4096.0000000000000000 |
| Number_of_Words_Code | 4k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Output_Characteristics | 3-State |
| Package_Body_Material | Ceramic |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP18,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | 38535Q/M;38534H;883B |
| Standby_Current_Max | 0.002000000000000 |
| Standby_Voltage_Min | 2.000000 |
| Supply_Current_Max | 35.000000000000000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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