EDI8L32512V25AI
SRAM Module, 512KX32, 25ns, CMOS, PQCC68Manufacturer: Microsemi Corporation
Categories: SRAMs
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Microsemi Corporation's EDI8L32512V25AI is a 512K x 32 asynchronous SRAM module, offering a total memory density of 16Mbits. This CMOS component features a maximum access time of 25ns and operates within a supply voltage range of 3.135V to 3.465V, with a nominal voltage of 3.3V. The module is housed in a 68-terminal PQCCJ package with J-bend terminals on a 1.270mm pitch, designed for surface mounting. Its operating temperature range is -40°C to +85°C. This SRAM module is suitable for applications in computing, telecommunications, and industrial control systems where high-speed, reliable memory is essential.
Additional Information
Series: EDI8L32512V25RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 25.0000000000000000 |
| JESD_30_Code | S-PQCC-J68 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | SRAM MODULE |
| Memory_Organization | 512KX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 68 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | QCCJ |
| Package_Shape | Square |
| Package_Style | CHIP CARRIER |
| Parallel_Serial | Parallel |
| Seated_Height_Max | 4.5720 |
| Supply_Voltage_Max | 3.46500 |
| Supply_Voltage_Min | 3.13500 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | J BEND |
| Terminal_Pitch | 1.270 |
| Terminal_Position | QUAD |
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