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5962-9690202HNX

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5962-9690202HNX

Standard SRAM, 256KX16, 25ns, CMOS, CDFP44

Manufacturer: Microsemi Corporation

Categories: SRAMs

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The Microsemi Corporation 5962-9690202HNX is a high-speed, asynchronous CMOS Static Random Access Memory featuring a density of 4 Megabits, organized as 256K words by 16 bits. This component offers a maximum access time of 25 nanoseconds and operates with a nominal supply voltage of 5V, ranging from 4.5V to 5.5V. Designed for demanding applications, it is housed in a 44-lead Ceramic Flat Pack (CDFP) package (JESD30 code R-CDFP-F44), suitable for surface mounting. The operating temperature range spans from -55°C to +125°C, with MIL-STD-883 screening. This memory device is well-suited for use in aerospace, defense, and high-reliability industrial systems where robust performance and environmental resistance are critical.

Additional Information

Series: 5962-9690202RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length28.4500
Width12.9500
TechnologyCMOS
Access_Time_Max25.0000000000000000
Additional_FeatureCAN ALSO BE CONFIGURED AS 256K X 16
JESD_30_CodeR-CDFP-F44
Memory_Density4194304.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization256KX16
Memory_Width16
Number_of_Functions1
Number_of_Terminals44
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDFP
Package_ShapeRectangular
Package_StyleFlatPack
Parallel_SerialParallel
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max2.6000
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormFlat
Terminal_Pitch1.270
Terminal_PositionDual

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