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5962-9669102HXX

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5962-9669102HXX

Standard SRAM, 128KX8, 100ns, CMOS, CDFP36

Manufacturer: Microsemi Corporation

Categories: SRAMs

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Microsemi Corporation's 5962-9669102HXX is a standard CMOS SRAM with a memory organization of 128K words by 8 bits, providing a total density of 1Mb. This asynchronous memory device features a maximum access time of 100ns and operates within a supply voltage range of 4.5V to 5.5V, with a nominal voltage of 5V. Designed for demanding environments, it boasts a wide operating temperature range from -55°C to +125°C. The component is housed in a 36-terminal ceramic, metal-sealed cofired flatpack package (JESD 30 Code: R-CDFP-F36) suitable for surface mounting. This SRAM is engineered for applications requiring high reliability and performance, often found in aerospace, defense, and industrial systems. Its robust construction and verified screening level (MIL-STD-883) ensure dependable operation in critical applications.

Additional Information

Series: 5962-9669102RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Width12.9500
TechnologyCMOS
Length23.3700
Access_Time_Max100.0000000000000000
JESD_30_CodeR-CDFP-F36
Memory_Density1048576.0000000000000000
Memory_IC_TypeSTANDARD SRAM
Memory_Organization128KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals36
Number_of_Words131072.0000000000000000
Number_of_Words_Code128K
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodeDFP
Package_ShapeRectangular
Package_StyleFlatPack
Parallel_SerialParallel
Screening_Level_Reference_StandardMIL-STD-883
Seated_Height_Max2.8970
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountYes
Terminal_FormFlat
Terminal_Pitch1.270
Terminal_PositionDual

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