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5962-9461109HXC

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5962-9461109HXC

Cache SRAM Module, 512KX32, 20ns, CMOS, CPGA66

Manufacturer: Microsemi Corporation

Categories: SRAMs

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Microsemi Corporation presents the 5962-9461109HXC, a 16 Mbit Cache SRAM Module featuring a 512K x 32 memory organization. This CMOS component offers a maximum access time of 20ns and operates asynchronously. It is housed in a 66-pin Ceramic Pin Grid Array (CPGA66) package, with a square package shape and a terminal pitch of 2.54mm. The module is rated for an extended industrial operating temperature range from -55°C to +125°C. This device is also configurable as a 2M x 8 memory. Applications can be found in high-reliability systems, including aerospace, defense, and industrial control where robust performance and extended temperature operation are critical. The 5962-9461109HXC meets MIL-PRF-38535Q/M, MIL-PRF-38534H, and MIL-STD-883B screening levels.

Additional Information

Series: 5962-9461109RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length30.1000
Width30.1000
TechnologyCMOS
Access_Time_Max20.0000000000000000
Additional_FeatureALSO CONFIGURABLE AS 2M X 8
JESD_30_CodeS-CPGA-P66
Memory_Density16777216.0000000000000000
Memory_IC_TypeCACHE SRAM MODULE
Memory_Organization512KX32
Memory_Width32
Number_of_Functions1
Number_of_Terminals66
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodePGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Parallel_SerialParallel
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max5.8400
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch2.540
Terminal_PositionPerpendicular

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