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5962-9461106HXC

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5962-9461106HXC

Cache SRAM Module, 512KX32, 45ns, CMOS, CPGA66

Manufacturer: Microsemi Corporation

Categories: SRAMs

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The Microsemi Corporation 5962-9461106HXC is a high-performance Cache SRAM Module designed for demanding applications. This component, part of the 5962-9461106 series, features a memory organization of 512K words by 32 bits, providing a significant memory density. It operates with a maximum access time of 45ns and utilizes CMOS technology for efficient operation. The module is housed in a 66-lead Ceramic Pin Grid Array (CPGA) package, suitable for robust system integration. It also offers configurability as a 2M x 8 device. With an operating temperature range from -55°C to +125°C and a supply voltage range of 4.5V to 5.5V, this SRAM module is engineered for reliability in environments such as aerospace, defense, and high-end computing. This component adheres to stringent screening levels, including MIL-STD-883B and DESC drawing 5962-9461106.

Additional Information

Series: 5962-9461106RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length30.1000
Width30.1000
TechnologyCMOS
Access_Time_Max45.0000000000000000
Additional_FeatureALSO CONFIGURABLE AS 2M X 8
JESD_30_CodeS-CPGA-P66
Memory_Density16777216.0000000000000000
Memory_IC_TypeCACHE SRAM MODULE
Memory_Organization512KX32
Memory_Width32
Number_of_Functions1
Number_of_Terminals66
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodePGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Parallel_SerialParallel
Screening_Level_Reference_Standard38535Q/M;38534H;883B
Seated_Height_Max5.8400
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch2.540
Terminal_PositionPerpendicular

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