APT95GR65JDU60
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT95GR65JDU60 is an NPT Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 135 A, with a pulsed capability of 380 A. The device dissipates a maximum power of 446 W and exhibits a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 95 A collector current, with typical turn-on and turn-off delays of 29 ns and 226 ns respectively, under test conditions of 433 V, 95 A, and 4.3 Ohm. The SOT-227-4, miniBLOC package facilitates robust chassis mounting for efficient thermal management. This IGBT is suited for demanding applications in industrial motor drives, electric vehicle powertrains, and power supply systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 95A |
| Supplier Device Package | SOT-227 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 29ns/226ns |
| Test Condition | 433V, 95A, 4.3Ohm, 15V |
| Gate Charge | 420 nC |
| Current - Collector (Ic) (Max) | 135 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 380 A |
| Power - Max | 446 W |
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