APT70GR65B2SCD30
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT70GR65B2SCD30 is an NPT Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component features a collector-emitter breakdown voltage of 650 V and a continuous collector current rating of 134 A, with a pulsed capability of 260 A. The IGBT exhibits a maximum power dissipation of 595 W. Key switching parameters include turn-on delay (Td(on)) of 19 ns and turn-off delay (Td(off)) of 170 ns at 25°C, with a gate charge of 305 nC. The Vce(on) is specified at 2.4 V at 15 V gate-emitter voltage and 70 A collector current. Operating across a temperature range of -55°C to 150°C (TJ), this component is housed in a TO-247-3 package, supplied in bulk. The APT70GR65B2SCD30 is suitable for use in power factor correction, motor control, and industrial power supply systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 70A |
| Supplier Device Package | T-MAX™ [B2] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 19ns/170ns |
| Test Condition | 433V, 70A, 4.3Ohm, 15V |
| Gate Charge | 305 nC |
| Current - Collector (Ic) (Max) | 134 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 260 A |
| Power - Max | 595 W |
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