APT45GR65SSCD10
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT45GR65SSCD10 is an NPT IGBT with a collector-emitter voltage rating of 650V. This component features a 45A continuous collector current (Ic) at 25°C, with a pulsed collector current (Icm) capability of 224A. The device offers a maximum power dissipation of 543W and a collector-emitter saturation voltage (Vce(on)) of 2.4V at 15V gate-emitter voltage and 45A collector current. Key switching characteristics include a turn-on delay (Td(on)) of 15ns and a turn-off delay (Td(off)) of 100ns at 25°C. The gate charge is specified at 203nC. Operating temperature ranges from -55°C to 150°C. This IGBT is packaged in a D3PAK (TO-268-3) for surface mounting. Applications include power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Supplier Device Package | D3PAK |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 15ns/100ns |
| Test Condition | 433V, 45A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 118 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 224 A |
| Power - Max | 543 W |
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