APT45GR65BSCD10
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation's APT45GR65BSCD10 is a high-performance NPT IGBT designed for demanding applications. This through-hole component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 118 A, with a pulsed capability of 224 A. It offers a maximum power dissipation of 543 W. The APT45GR65BSCD10 exhibits a typical Vce(on) of 2.4 V at 15 V gate-emitter voltage and 45 A collector current, with an on/off delay of 15 ns/100 ns at 25°C. The gate charge is rated at 203 nC, and the reverse recovery time is 80 ns. Operating across an extended temperature range of -55°C to 150°C (TJ), this device is housed in a standard TO-247-3 package. It finds application in industries such as industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Supplier Device Package | TO-247 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 15ns/100ns |
| Test Condition | 433V, 45A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 118 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 224 A |
| Power - Max | 543 W |
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