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APT44GA60BD30C

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APT44GA60BD30C

IGBT 600V 78A 337W TO247

Manufacturer: Microsemi Corporation

Categories: Single IGBTs

Quality Control: Learn More

The Microsemi Corporation APT44GA60BD30C is a POWER MOS 8™ series Insulated Gate Bipolar Transistor (IGBT). This PT IGBT features a collector-emitter voltage of 600V and a continuous collector current of 78A, with a pulsed current capability of 130A. It offers a maximum power dissipation of 337W. Key electrical parameters include a Vce(on) of 1.6V at 15V Vge and 26A Ic, with a gate charge of 128nC. Switching characteristics are specified as 16ns (on) and 102ns (off) at 400V, 26A, 4.7 Ohm, and 15V. The component is housed in a TO-247-3 package and is designed for through-hole mounting. This device finds application in power conversion systems and high-voltage switching applications across various industrial sectors.

Additional Information

Series: POWER MOS 8™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 26A
Supplier Device PackageTO-247 [B]
IGBT TypePT
Td (on/off) @ 25°C16ns/102ns
Switching Energy409µJ (on), 450µJ (off)
Test Condition400V, 26A, 4.7Ohm, 15V
Gate Charge128 nC
Current - Collector (Ic) (Max)78 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)130 A
Power - Max337 W

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