APT25GR120SSCD10
IGBT NPT 1200V 75A D3PAKManufacturer: Microsemi Corporation
Categories: Single IGBTs
Quality Control: Learn More
The Microsemi Corporation APT25GR120SSCD10 is an NPT IGBT with a collector-emitter breakdown voltage of 1200 V. This component offers a continuous collector current of 75 A and a pulsed collector current of 100 A. Featuring a low on-state voltage of 3.2 V at 15 V gate-emitter voltage and 25 A collector current, it boasts a maximum power dissipation of 521 W. Switching characteristics include turn-on and turn-off delays of 16 ns and 122 ns respectively, with switching energy figures of 434 µJ (on) and 466 µJ (off) under specified test conditions. The APT25GR120SSCD10 is housed in a D3PAK (TO-268-3, TO-268AA) surface-mount package and operates within an extended temperature range of -55°C to 150°C. This device finds application in high-power conversion systems, including industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | D3PAK |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 434µJ (on), 466µJ (off) |
| Test Condition | 600V, 25A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 521 W |
Request a Quote
Clients Also Buy
APT95GR65JDU60
INSULATED GATE BIPOLAR TRANSISTO
APT20GF120BRG
IGBT 1200V 32A 200W TO247
APT15GP60BDLG
IGBT PT 600V 56A TO247
