APT25GR120BSCD10
IGBT 1200V 75A 521W TO247Manufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT25GR120BSCD10 is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 100A. It features a low on-state voltage of 3.2V at 25A and 15V gate voltage, minimizing conduction losses. With a maximum power dissipation of 521W and switching energy figures of 434µJ (on) and 466µJ (off) at 600V, 25A, this IGBT ensures efficient power conversion. The device operates across a wide temperature range of -55°C to 150°C (TJ) and is housed in a TO-247 package for robust thermal management. Typical applications include high-voltage power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-247 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 434µJ (on), 466µJ (off) |
| Test Condition | 600V, 25A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 521 W |
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