APT20GF120BRG
IGBT 1200V 32A 200W TO247Manufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT20GF120BRG is an NPT IGBT designed for high-voltage applications. This component features a Collector-Emitter Voltage (Vce) breakdown of 1200V and a continuous Collector Current (Ic) rating of 32A, with a pulsed capability of 64A. The IGBT exhibits a low on-state voltage (Vce(on)) of 3.2V at 15V Vge and 15A Ic. With a maximum power dissipation of 200W and a switching energy of 2.7mJ, it is suitable for demanding power conversion tasks. The device offers fast switching characteristics with typical on and off delays of 17ns and 105ns respectively at 25°C, and a gate charge of 95 nC. Operating across a wide temperature range from -55°C to 150°C (TJ), this component is provided in a TO-247-3 package for through-hole mounting. It finds application in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 15A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 17ns/105ns |
| Switching Energy | 2.7mJ |
| Test Condition | - |
| Gate Charge | 95 nC |
| Current - Collector (Ic) (Max) | 32 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 64 A |
| Power - Max | 200 W |
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