APT13GP120KG
IGBT 1200V 41A 250W TO220Manufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation APT13GP120KG is a POWER MOS 7® Insulated Gate Bipolar Transistor (IGBT) with a collector-emitter voltage rating of 1200V. This device features a continuous collector current of 41A and a pulsed collector current of 50A, dissipating a maximum power of 250W. The IGBT type is PT with a standard input. Key switching characteristics include a gate charge of 55 nC, with typical turn-on delay (Td(on)) of 9ns and turn-off delay (Td(off)) of 28ns at 25°C, tested under 600V, 13A, 5 Ohm, and 15V conditions. On-state voltage drop (Vce(on)) is a maximum of 3.9V at 15V gate-emitter voltage and 13A collector current. Switching energy is specified at 114 µJ (on) and 165 µJ (off). The APT13GP120KG is housed in a TO-220-3 package with a through-hole mounting type and operates within a temperature range of -55°C to 150°C. This component is suitable for applications in power electronics, including motor drives and power supplies.
Additional Information
Series: POWER MOS 7®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 13A |
| Supplier Device Package | TO-220 [K] |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 9ns/28ns |
| Switching Energy | 114µJ (on), 165µJ (off) |
| Test Condition | 600V, 13A, 5Ohm, 15V |
| Gate Charge | 55 nC |
| Current - Collector (Ic) (Max) | 41 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 50 A |
| Power - Max | 250 W |
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