APT11GP60BDQBG
IGBT 600V 41A 187W TO247Manufacturer: Microsemi Corporation
Categories: Single IGBTs
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Microsemi Corporation POWER MOS 7® APT11GP60BDQBG is a 600V insulated gate bipolar transistor (IGBT) designed for high-power applications. This PT IGBT exhibits a maximum collector current (Ic) of 41A and a pulsed collector current (Icm) of 45A, with a power dissipation capability of 187W. The device features a low on-state voltage drop of 2.7V at 15V gate-emitter voltage and 11A collector current, with typical switching times of 7ns turn-on and 29ns turn-off at 400V and 11A. It has a gate charge of 40nC and offers switching energy figures of 46µJ (on) and 90µJ (off). Packaged in a TO-247-3 through-hole configuration, this component operates across a temperature range of -55°C to 150°C. Applications include motor control, power supplies, and industrial automation.
Additional Information
Series: POWER MOS 7®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 11A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 7ns/29ns |
| Switching Energy | 46µJ (on), 90µJ (off) |
| Test Condition | 400V, 11A, 5Ohm, 15V |
| Gate Charge | 40 nC |
| Current - Collector (Ic) (Max) | 41 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 187 W |
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