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APT11GF120BRDQ1G

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APT11GF120BRDQ1G

IGBT 1200V 25A 156W TO247

Manufacturer: Microsemi Corporation

Categories: Single IGBTs

Quality Control: Learn More

Microsemi Corporation APT11GF120BRDQ1G is a NPT IGBT with a 1200V collector-emitter breakdown voltage. This component offers a continuous collector current of 25A and a pulsed collector current of 24A, with a maximum power dissipation of 156W. The Vce(on) is 3V at 15V gate voltage and 8A collector current, featuring a gate charge of 65 nC. Switching characteristics include on-state energy of 300µJ and off-state energy of 285µJ, with typical turn-on delay of 7ns and turn-off delay of 100ns at 800V, 8A, 10 Ohm, 15V. The APT11GF120BRDQ1G is housed in a TO-247-3 package with a through-hole mounting type and operates across a temperature range of -55°C to 150°C. This device is suitable for high-voltage power conversion applications in industries such as industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 8A
Supplier Device PackageTO-247 [B]
IGBT TypeNPT
Td (on/off) @ 25°C7ns/100ns
Switching Energy300µJ (on), 285µJ (off)
Test Condition800V, 8A, 10Ohm, 15V
Gate Charge65 nC
Current - Collector (Ic) (Max)25 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)24 A
Power - Max156 W

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