MSC280SMA120S
SICFET N-CH 1.2KV D3PAKManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's MSC280SMA120S is an N-Channel Silicon Carbide (SiC) Field-Effect Transistor (FET). This component is designed for high-voltage applications, featuring a Drain-to-Source Voltage (Vdss) of 1200 V. The SiCFET technology enables superior performance characteristics compared to traditional silicon devices, including higher switching frequencies and reduced conduction losses.
The MSC280SMA120S is housed in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA package, facilitating surface mounting. Its robust construction and operating temperature range of -55°C to 175°C (TJ) make it suitable for demanding environments. This device finds application in power conversion systems within electric vehicles, industrial motor drives, and renewable energy infrastructure, where high efficiency and reliability are critical.
Additional Information
Series: -RoHS Status: Request inventory verificationManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | D3PAK |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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