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JANTXV2N7236U

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JANTXV2N7236U

MOSFET P-CH 100V 18A TO267AB

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N7236U is a P-Channel MOSFET offering 100V drain-source voltage and continuous drain current of 18A at 25°C case temperature. This hermetically sealed device, qualified to MIL-PRF-19500/595, features a low on-resistance of 220mOhm at 18A and 10V Vgs. Designed for demanding applications, it supports a gate-source voltage range of ±20V and has a threshold voltage of 4V at 250µA. With a maximum junction temperature of 150°C, it dissipates up to 125W at the case and 4W at ambient. The TO-267AB package facilitates surface mounting. This component finds application in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-267AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs220mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-267AB
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
QualificationMIL-PRF-19500/595

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