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JANTXV2N7225

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JANTXV2N7225

MOSFET N-CH 200V 27.4A TO254AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N7225 is an N-Channel MOSFET designed for high-power switching applications. This component offers a 200V drain-to-source voltage (Vdss) and can handle a continuous drain current of 27.4A at 25°C case temperature. Featuring a low on-resistance of 105mOhm maximum at 27.4A and 10V gate-source voltage, it minimizes conduction losses. The JANTXV2N7225 has a maximum gate charge of 115 nC at 10V, facilitating efficient switching. Its TO-254AA package, suitable for through-hole mounting, supports significant power dissipation, rated at 4W ambient and 150W case temperature. The device operates across a wide temperature range of -55°C to 150°C (TJ) and is qualified to MIL-PRF-19500/592, indicating its suitability for demanding military and industrial environments.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-254-3, TO-254AA (Straight Leads)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27.4A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 27.4A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-254AA
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
QualificationMIL-PRF-19500/592

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