Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

JANTXV2N7224U

Banner
productimage

JANTXV2N7224U

MOSFET N-CH 100V 34A TO267AB

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N7224U is an N-Channel MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 34A at 25°C case temperature. The Rds On is specified at a maximum of 81mOhm at 34A and 10V gate drive. With a gate charge (Qg) of 125 nC at 10V, it is suitable for high-speed switching. The device is housed in a TO-267AB package, enabling surface mounting. Power dissipation capabilities are 4W (Ta) and 150W (Tc). Operating across an extended temperature range of -55°C to 150°C (TJ), this component is qualified to MIL-PRF-19500/592, indicating its suitability for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-267AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs81mOhm @ 34A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-267AB
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
QualificationMIL-PRF-19500/592

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
JANTX2N6790

MOSFET N-CH 200V 3.5A TO39

product image
2N7225

MOSFET N-CH 200V 27.4A TO254AA

product image
APT60M75JVFR

MOSFET N-CH 600V 62A ISOTOP