JANTXV2N6849U
MOSFET P-CH 100V 6.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANTXV2N6849U is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C. The Rds On is specified at a maximum of 320mOhm at 6.5A and 10V Vgs. With a gate charge (Qg) of 34.8 nC maximum at 10V, this MOSFET offers efficient switching characteristics. Power dissipation is rated at 800mW (Ta) and 25W (Tc). The JANTXV2N6849U is housed in an 18-ULCC surface mount package (9.14x7.49) and operates within a temperature range of -55°C to 150°C (TJ). Its military grade qualification (MIL-PRF-19500/564) indicates suitability for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Qualification | MIL-PRF-19500/564 |
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