JANTXV2N6849
MOSFET P-CH 100V 6.5A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation JANTXV2N6849 is a P-Channel MOSFET designed for high-reliability applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6.5A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 320mOhm maximum at 6.5A and 10V gate-source voltage. With a maximum power dissipation of 800mW (Ta) and 25W (Tc), it is suitable for demanding thermal environments. The JANTXV2N6849 utilizes MOSFET technology and is packaged in a TO-205AF (TO-39) metal can for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This component is qualified to MIL-PRF-19500/564, indicating its suitability for military and aerospace applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Qualification | MIL-PRF-19500/564 |
Request a Quote
Clients Also Buy
JANTX2N6790
MOSFET N-CH 200V 3.5A TO39
2N7225
MOSFET N-CH 200V 27.4A TO254AA
APT60M75JVFR
MOSFET N-CH 600V 62A ISOTOP
