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JANTXV2N6804

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JANTXV2N6804

MOSFET P-CH 100V 11A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6804 is a P-channel MOSFET designed for high-reliability applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 11A at 25°C (Tc). The JANTXV2N6804 offers a low on-resistance (Rds On) of 360mOhm at 11A and 10V gate-source voltage. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, it provides robust switching characteristics. The device is packaged in a TO-204AA (TO-3) through-hole format, supporting power dissipation of 4W (Ta) and 75W (Tc). Qualified to MIL-PRF-19500/562, this MOSFET is suitable for demanding environments in aerospace, defense, and industrial sectors requiring military-grade performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs360mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
QualificationMIL-PRF-19500/562

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