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JANTXV2N6802

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JANTXV2N6802

MOSFET N-CH 500V 2.5A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTXV2N6802 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The JANTXV2N6802 offers a maximum on-resistance (Rds On) of 1.6 Ohms at 2.5 A and 10 V Vgs. With a gate charge (Qg) of 33 nC at 10 V, it is suitable for switching applications requiring efficient power management. The component is housed in a TO-205AF (TO-39) metal can package, facilitating through-hole mounting. Power dissipation is rated at 800 mW (Ta) and 25 W (Tc). This MOSFET is qualified to MIL-PRF-19500/557, indicating its suitability for military and demanding industrial environments, including aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
QualificationMIL-PRF-19500/557

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