JANTXV2N6802
MOSFET N-CH 500V 2.5A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microsemi Corporation JANTXV2N6802 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The JANTXV2N6802 offers a maximum on-resistance (Rds On) of 1.6 Ohms at 2.5 A and 10 V Vgs. With a gate charge (Qg) of 33 nC at 10 V, it is suitable for switching applications requiring efficient power management. The component is housed in a TO-205AF (TO-39) metal can package, facilitating through-hole mounting. Power dissipation is rated at 800 mW (Ta) and 25 W (Tc). This MOSFET is qualified to MIL-PRF-19500/557, indicating its suitability for military and demanding industrial environments, including aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
Request a Quote
Clients Also Buy
JAN2N6782U
MOSFET N-CH 100V 3.5A 18ULCC
JANTXV2N6849
MOSFET P-CH 100V 6.5A TO205AF
2N6790
MOSFET N-CH 200V 3.5A TO39
