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JANTXV2N6800U

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JANTXV2N6800U

MOSFET N-CH 400V 3A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6800U is an N-Channel power MOSFET designed for high-reliability applications. This device features a 400 V drain-to-source voltage (Vdss) and can handle a continuous drain current of 3A at 25°C (Tc). The Rds On is specified at a maximum of 1.1 Ohm at 3A and 10V gate-source voltage. With a gate charge (Qg) of 34.75 nC (max) at 10V, it offers efficient switching characteristics. The JANTXV2N6800U is packaged in an 18-ULCC (9.14x7.49) surface-mount configuration, suitable for demanding thermal management with a maximum power dissipation of 25W (Tc) and 800mW (Ta). This component is qualified to MIL-PRF-19500/557, indicating its suitability for military and aerospace applications. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is a robust solution for power switching and control in critical systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs34.75 nC @ 10 V
QualificationMIL-PRF-19500/557

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