JANTXV2N6800U
MOSFET N-CH 400V 3A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANTXV2N6800U is an N-Channel power MOSFET designed for high-reliability applications. This device features a 400 V drain-to-source voltage (Vdss) and can handle a continuous drain current of 3A at 25°C (Tc). The Rds On is specified at a maximum of 1.1 Ohm at 3A and 10V gate-source voltage. With a gate charge (Qg) of 34.75 nC (max) at 10V, it offers efficient switching characteristics.
The JANTXV2N6800U is packaged in an 18-ULCC (9.14x7.49) surface-mount configuration, suitable for demanding thermal management with a maximum power dissipation of 25W (Tc) and 800mW (Ta). This component is qualified to MIL-PRF-19500/557, indicating its suitability for military and aerospace applications. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is a robust solution for power switching and control in critical systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.75 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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