JANTXV2N6798
MOSFET N-CH 200V 5.5A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANTXV2N6798 is an N-Channel Power MOSFET designed for demanding applications. This device offers a 200V drain-to-source breakdown voltage and a continuous drain current capability of 5.5A at 25°C case temperature. The JANTXV2N6798 features a low on-resistance of 420mOhm maximum at 5.5A and 10V gate drive voltage, with a typical gate charge of 42.07 nC. It is qualified to MIL-PRF-19500/557, indicating its suitability for military and high-reliability applications. The component is housed in a TO-205AF (TO-39) metal can package for through-hole mounting, with a maximum power dissipation of 25W at 25°C case temperature or 800mW at 25°C ambient. This MOSFET is utilized across various industries requiring robust power switching and control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.07 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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