JANTXV2N6796U
MOSFET N-CH 100V 8A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation JANTXV2N6796U is an N-Channel MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 195mOhm at 8A and 10V, it provides efficient switching. The device features a surface mount 18-ULCC (9.14x7.49) package and operates over an extended temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge (Qg) of 28.51 nC @ 10V and a threshold voltage (Vgs(th)) of 4V @ 250µA. Power dissipation is rated at 800mW (Ta) and 25W (Tc). This MOSFET is qualified to MIL-PRF-19500/557, indicating its suitability for military and high-reliability applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.51 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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