JANTXV2N6790U
MOSFET N-CH 200V 2.8A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation JANTXV2N6790U is an N-Channel MOSFET designed for high-reliability applications. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 2.8 A at 25°C. With a maximum Rds On of 850 mOhm at 3.5 A and 10 V, this MOSFET offers efficient switching characteristics. It is qualified to MIL-PRF-19500/555 and operates within a temperature range of -55°C to 150°C. The JANTXV2N6790U is housed in an 18-ULCC surface mount package, measuring 9.14x7.49, with a power dissipation of 800 mW (Tc). Typical applications include power switching and control in aerospace and defense systems. Key parameters include a gate charge (Qg) of 14.3 nC at 10 V and a gate-source threshold voltage (Vgs(th)) of 4 V at 250 µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Qualification | MIL-PRF-19500/555 |
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