JANTXV2N6790
MOSFET N-CH 200V 3.5A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Microsemi Corporation JANTXV2N6790 is an N-channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3.5A at 25°C (Tc). The Rds On is specified at a maximum of 850mOhm at 3.5A and 10V gate drive. With a maximum power dissipation of 800mW (Tc) and an operating temperature range of -55°C to 150°C (TJ), this device is suitable for harsh environments. The JANTXV2N6790 is qualified to MIL-PRF-19500/555, indicating its suitability for military and aerospace applications. It is housed in a TO-205AF (TO-39) metal can package and mounts via a through-hole configuration. Key parameters include a Gate Charge (Qg) of 14.3nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Qualification | MIL-PRF-19500/555 |
Request a Quote
Clients Also Buy
APTM100U13SG
MOSFET N-CH 1000V 65A MODULE
JANTX2N6758
MOSFET N-CH 200V 9A TO204AA
JAN2N6782U
MOSFET N-CH 100V 3.5A 18ULCC
