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JANTXV2N6790

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JANTXV2N6790

MOSFET N-CH 200V 3.5A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTXV2N6790 is an N-channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3.5A at 25°C (Tc). The Rds On is specified at a maximum of 850mOhm at 3.5A and 10V gate drive. With a maximum power dissipation of 800mW (Tc) and an operating temperature range of -55°C to 150°C (TJ), this device is suitable for harsh environments. The JANTXV2N6790 is qualified to MIL-PRF-19500/555, indicating its suitability for military and aerospace applications. It is housed in a TO-205AF (TO-39) metal can package and mounts via a through-hole configuration. Key parameters include a Gate Charge (Qg) of 14.3nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs14.3 nC @ 10 V
QualificationMIL-PRF-19500/555

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