JANTXV2N6788U
MOSFET N-CH 100V 4.5A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANTXV2N6788U is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 350mOhm when driven at 10V with a drain current of 6A. The gate charge (Qg) is a maximum of 18 nC at 10V. This military-grade component is supplied in an 18-ULCC surface mount package with dimensions of 9.14x7.49mm. It offers a maximum power dissipation of 800mW at 25°C and operates across a temperature range of -55°C to 150°C (TJ). The JANTXV2N6788U is qualified to MIL-PRF-19500/555 standards, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Qualification | MIL-PRF-19500/555 |
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