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JANTXV2N6784

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JANTXV2N6784

MOSFET N-CH 200V 2.25A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6784 is an N-Channel power MOSFET designed for high-reliability applications. This through-hole component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.25A at 25°C (Tc). The device exhibits a maximum Rds On of 1.6Ohm at 2.25A and 10V Vgs. Key parameters include a gate charge (Qg) of 8.6 nC at 10V and a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 800mW (Ta) and 15W (Tc). The JANTXV2N6784 meets MIL-PRF-19500/556 qualification standards, making it suitable for demanding aerospace and defense systems. It is packaged in a TO-205AF (TO-39) metal can. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AF Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.25A (Tc)
Rds On (Max) @ Id, Vgs1.6Ohm @ 2.25A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs8.6 nC @ 10 V
QualificationMIL-PRF-19500/556

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