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JANTXV2N6782U

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JANTXV2N6782U

MOSFET N-CH 100V 3.5A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6782U is an N-Channel MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 3.5A at 25°C (Tc). The On-Resistance (Rds On) is specified at a maximum of 610mOhm at 3.5A and 10V Vgs. The device offers a Gate Charge (Qg) of 8.1 nC maximum at 10V Vgs and a Gate-to-Source Voltage (Vgs) rating of ±20V. Power dissipation is 800mW (Ta) and 15W (Tc). The JANTXV2N6782U is qualified to MIL-PRF-19500/556, indicating its suitability for military applications. It is provided in an 18-ULCC surface-mount package. This component is commonly utilized in aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Rds On (Max) @ Id, Vgs610mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 15W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 10 V
QualificationMIL-PRF-19500/556

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