JANTXV2N6766
MOSFET N-CH 200V 30A TO3Manufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation JANTXV2N6766 is an N-Channel MOSFET designed for demanding applications requiring high voltage and current handling. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 30A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 90mOhm at 30A and 10V drive voltage, with a maximum gate charge (Qg) of 115 nC at 10V.
Constructed with MOSFET technology, the JANTXV2N6766 is packaged in a TO-3 (TO-204AE) through-hole configuration, suitable for robust thermal management with power dissipation ratings of 4W (Ta) and 150W (Tc). Its military-grade qualification (MIL-PRF-19500/543) and operating temperature range of -55°C to 150°C (TJ) make it ideal for aerospace, defense, and industrial power conversion systems. The JANTXV2N6766 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Qualification | MIL-PRF-19500/543 |
Request a Quote
Clients Also Buy
APTM100U13SG
MOSFET N-CH 1000V 65A MODULE
JANTX2N6758
MOSFET N-CH 200V 9A TO204AA
JAN2N6782U
MOSFET N-CH 100V 3.5A 18ULCC
