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JANTXV2N6766

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JANTXV2N6766

MOSFET N-CH 200V 30A TO3

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6766 is an N-Channel MOSFET designed for demanding applications requiring high voltage and current handling. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 30A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 90mOhm at 30A and 10V drive voltage, with a maximum gate charge (Qg) of 115 nC at 10V. Constructed with MOSFET technology, the JANTXV2N6766 is packaged in a TO-3 (TO-204AE) through-hole configuration, suitable for robust thermal management with power dissipation ratings of 4W (Ta) and 150W (Tc). Its military-grade qualification (MIL-PRF-19500/543) and operating temperature range of -55°C to 150°C (TJ) make it ideal for aerospace, defense, and industrial power conversion systems. The JANTXV2N6766 is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs90mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
QualificationMIL-PRF-19500/543

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