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JANTXV2N6764

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JANTXV2N6764

MOSFET N-CH 100V 38A TO3

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTXV2N6764 is an N-Channel MOSFET designed for high-reliability applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 38A at 25°C (Tc). The Rds On is specified at a maximum of 65mOhm at 38A and a gate-source voltage of 10V. The device offers significant power handling capabilities with a maximum power dissipation of 150W (Tc) and 4W (Ta). Operating across a wide temperature range from -55°C to 150°C (TJ), this MOSFET is housed in a TO-3 (TO-204AE) through-hole package, suitable for demanding thermal management. It meets MIL-PRF-19500/543 qualification, indicating its suitability for military and aerospace applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
QualificationMIL-PRF-19500/543

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