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JANTXV2N6762

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JANTXV2N6762

MOSFET N-CH 500V 4.5A TO204AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTXV2N6762 is a JANTXV qualified N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 4.5 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 1.8 Ohms at 4.5 A and 10 V gate drive voltage. With a gate charge (Qg) of 40 nC maximum at 10 V, it offers efficient switching characteristics. The MOSFET is housed in a TO-204AA (TO-3) through-hole package, enabling robust thermal management with a power dissipation of 75 W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component meets the stringent requirements of MIL-PRF-19500/542, making it suitable for aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Rds On (Max) @ Id, Vgs1.8Ohm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
QualificationMIL-PRF-19500/542

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