JANTX2N7236U
MOSFET P-CH 100V 18A TO267ABManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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The Microsemi Corporation JANTX2N7236U is a P-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 18 A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 220 mOhm at 18 A and 10 V gate-source voltage. With a gate charge (Qg) of 60 nC at 10 V, it offers efficient switching characteristics. The component is packaged in a TO-267AB surface mount configuration, providing a thermal resistance suitable for high-power dissipation, rated at 4 W (Ta) and 125 W (Tc). This military-grade component, qualified to MIL-PRF-19500/595, is utilized in aerospace, defense, and high-reliability industrial systems. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-267AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-267AB |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Qualification | MIL-PRF-19500/595 |
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