Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

JANTX2N7225U

Banner
productimage

JANTX2N7225U

MOSFET N-CH 200V 27.4A TO267AB

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTX2N7225U is an N-Channel power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 27.4 A at 25°C (Tc). With a low Rds On of 105 mOhm at 27.4 A and 10 V, this MOSFET minimizes conduction losses. The specified gate charge is 115 nC at 10 V. It is packaged in a TO-267AB surface mount case, offering a maximum power dissipation of 4 W (Ta) and 150 W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), the JANTX2N7225U is qualified under MIL-PRF-19500/592, indicating its suitability for military and high-reliability applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-267AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27.4A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 27.4A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-267AB
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
QualificationMIL-PRF-19500/592

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
APT6030BN

MOSFET N-CH 600V 23A TO247AD

product image
APT5SM170B

SICFET N-CH 1700V 5A TO247-3

product image
JANTX2N6768

MOSFET N-CH 400V 14A TO3