JANTX2N6802
MOSFET N-CH 500V 2.5A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Microsemi Corporation JANTX2N6802 is an N-Channel MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). The Rds On is specified at a maximum of 1.6 Ohm at 2.5 A, 10 V, with a gate drive voltage requirement of 10 V. Key parameters include a Gate Charge (Qg) of 33 nC at 10 V and a Vgs(th) of 4 V at 250 µA. The device features a maximum Vgs of ±20 V. Power dissipation is rated at 800 mW (Ta) and 25 W (Tc). Packaged in a TO-205AF (TO-39) metal can, this through-hole mounted component operates across a temperature range of -55°C to 150°C (TJ). The JANTX2N6802 meets MIL-PRF-19500/557 qualification, indicating its suitability for military and high-reliability applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AF Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
Request a Quote
Clients Also Buy
APTM20SKM05G
MOSFET N-CH 200V 317A SP6
APT60M75JVFR
MOSFET N-CH 600V 62A ISOTOP
JANTX2N6796U
MOSFET N-CH 100V 8A 18ULCC
