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JANTX2N6800U

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JANTX2N6800U

MOSFET N-CH 400V 3A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTX2N6800U is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) capability of 3A at 25°C (Tc). The Rds On (Max) is specified at 1.1 Ohm, driven at 10V. With a maximum Gate Charge (Qg) of 34.75 nC @ 10 V and a threshold voltage (Vgs(th)) maximum of 4V @ 250µA, this MOSFET offers efficient switching characteristics. The JANTX2N6800U is qualified to MIL-PRF-19500/557 and operates across a temperature range of -55°C to 150°C (TJ). It is housed in an 18-ULCC surface mount package with dimensions of 9.14x7.49 mm. Power dissipation is rated at 800mW (Ta) and 25W (Tc). This component is suitable for use in aerospace and defense applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs34.75 nC @ 10 V
QualificationMIL-PRF-19500/557

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