JANTX2N6800U
MOSFET N-CH 400V 3A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation JANTX2N6800U is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) capability of 3A at 25°C (Tc). The Rds On (Max) is specified at 1.1 Ohm, driven at 10V. With a maximum Gate Charge (Qg) of 34.75 nC @ 10 V and a threshold voltage (Vgs(th)) maximum of 4V @ 250µA, this MOSFET offers efficient switching characteristics. The JANTX2N6800U is qualified to MIL-PRF-19500/557 and operates across a temperature range of -55°C to 150°C (TJ). It is housed in an 18-ULCC surface mount package with dimensions of 9.14x7.49 mm. Power dissipation is rated at 800mW (Ta) and 25W (Tc). This component is suitable for use in aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.75 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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