JANTX2N6800
MOSFET N-CH 400V 3A TO205AFManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's JANTX2N6800 is an N-Channel MOSFET designed for demanding applications. This component offers a 400 V drain-to-source voltage (Vdss) and a continuous drain current (Id) rating of 3 A at 25°C (Tc). With a maximum Rds On of 1.1 Ohm at 3 A and 10 V, it ensures efficient power handling. The JANTX2N6800 features a typical gate charge of 34.75 nC at 10 V and a gate-source voltage (Vgs) tolerance of ±20 V. Its power dissipation capabilities are 800 mW (Ta) and 25 W (Tc). The component is housed in a TO-205AF (TO-39) package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/557 and operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in defense and aerospace industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-205AF (TO-39) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 34.75 nC @ 10 V |
| Qualification | MIL-PRF-19500/557 |
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