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JANTX2N6800

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JANTX2N6800

MOSFET N-CH 400V 3A TO205AF

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation's JANTX2N6800 is an N-Channel MOSFET designed for demanding applications. This component offers a 400 V drain-to-source voltage (Vdss) and a continuous drain current (Id) rating of 3 A at 25°C (Tc). With a maximum Rds On of 1.1 Ohm at 3 A and 10 V, it ensures efficient power handling. The JANTX2N6800 features a typical gate charge of 34.75 nC at 10 V and a gate-source voltage (Vgs) tolerance of ±20 V. Its power dissipation capabilities are 800 mW (Ta) and 25 W (Tc). The component is housed in a TO-205AF (TO-39) package, suitable for through-hole mounting. Qualified to MIL-PRF-19500/557 and operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is utilized in defense and aerospace industries.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs1.1Ohm @ 3A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-205AF (TO-39)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs34.75 nC @ 10 V
QualificationMIL-PRF-19500/557

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