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JANTX2N6798U

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JANTX2N6798U

MOSFET N-CH 200V 5.5A 18ULCC

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTX2N6798U is an N-Channel MOSFET designed for high-reliability applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 5.5A at 25°C (Tc). The MOSFET exhibits a maximum on-resistance (Rds On) of 420mOhm at 5.5A and 10V gate drive. With a gate charge (Qg) of 42.07 nC at 10V, it is suitable for demanding switching applications. The JANTX2N6798U is packaged in an 18-ULCC (9.14x7.49) surface-mount configuration and operates across a temperature range of -55°C to 150°C (TJ). Its power dissipation capabilities are 800mW (Ta) and 25W (Tc). This device is qualified to MIL-PRF-19500/557, indicating its suitability for military and aerospace sectors, as well as high-performance industrial systems requiring robust power management.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case18-CLCC
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs420mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)800mW (Ta), 25W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package18-ULCC (9.14x7.49)
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs42.07 nC @ 10 V
QualificationMIL-PRF-19500/557

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