JANTX2N6784U
MOSFET N-CH 200V 2.25A 18ULCCManufacturer: Microsemi Corporation
Categories: Single FETs, MOSFETs
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Microsemi Corporation's JANTX2N6784U is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 2.25A at 25°C (Tc). The Rds On is specified at a maximum of 1.6 Ohms at 2.25A and 10V Vgs. With a gate charge (Qg) of 8.6 nC at 10V, it offers efficient switching characteristics. The device supports a gate-source voltage (Vgs) up to ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 800mW (Ta) and 15W (Tc). This military-grade component is housed in an 18-ULCC package with dimensions of 9.14x7.49mm and is suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ) and meets the MIL-PRF-19500/556 qualification. This MOSFET is commonly utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 18-CLCC |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.25A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 15W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Grade | Military |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V |
| Qualification | MIL-PRF-19500/556 |
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