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JANTX2N6766

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JANTX2N6766

MOSFET N-CH 200V 30A TO3

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Microsemi Corporation JANTX2N6766 is an N-Channel MOSFET designed for demanding applications. This component boasts a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 30A at 25°C (Tc). The Rds On is specified as a maximum of 90 mOhm at 30A and 10V drive voltage. It features a gate charge (Qg) of 115 nC at 10V. With a maximum power dissipation of 150W (Tc) and 4W (Ta), and an operating temperature range of -55°C to 150°C (TJ), this device is suitable for high-power switching and amplification. The through-hole TO-3 (TO-204AE) package provides robust thermal management. The JANTX2N6766 meets the rigorous standards of MIL-PRF-19500/543, indicating its suitability for military and aerospace applications, as well as industrial power control.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AE
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs90mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
QualificationMIL-PRF-19500/543

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