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JANTX2N6764T1

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JANTX2N6764T1

MOSFET N-CH 100V 38A TO254AA

Manufacturer: Microsemi Corporation

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Microsemi Corporation JANTX2N6764T1 is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 38A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 65mOhm at 38A and 10V gate drive. With a gate charge (Qg) of 125 nC at 10V, it offers efficient switching characteristics. Power dissipation is rated at 4W (Ta) and 150W (Tc). The JANTX2N6764T1 is housed in a TO-254AA through-hole package, suitable for high-reliability applications requiring robust thermal management. This device meets MIL-PRF-19500/543 qualification standards, indicating its suitability for military and aerospace environments. Its operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-254-3, TO-254AA (Straight Leads)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-254AA
GradeMilitary
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
QualificationMIL-PRF-19500/543

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